Samsung to begin producing 512 gigabyte internal memory storage for next-generation mobile devices

Briefing

Samsung to begin producing 512 gigabyte internal memory storage for next-generation mobile devices

December 11, 2017

Briefing

  • Advanced Memory Storage – Samsung set to start production of world’s first 512 gigabyte (GB) embedded Universal Flash Storage (eUFS) for next-generation smartphones and tablets
  • Double Storage Density – Has double storage capacity of current state-of-the-art 256 GB eUFS solution while taking up same space, enabling smartphones to store 130 10-minute 4K videos, ten times improvement compared to 64 GB eUFS
  • Fast Memory – Strong read performance of up to 860 megabytes per second and write performance of up to 255 megabytes per second, allowing transfer of five gigabyte full high definition (HD) video to solid state drive in six seconds, eight times faster than external microSD card
  • Applications – Include seamless multimedia experiences, file searching, and video downloading on mobile devices
  • Expanded Production – Plans to expand production of 512 GB and 256 GB eUFS solutions

Accelerator

Sector

Information Technology

Organization

Samsung

Source

Original Publication Date

December 4, 2017

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